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Chinese Physics C> 2015, Vol. 39> Issue(1) : 016004 DOI: 10.1088/1674-1137/39/1/016004

Study of the dose rate effect of 180 nm nMOSFETs

  • Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A "true" dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

  • References

    [1] Pease R L. IEEE Trans. Nucl. Sci., 2003, 50(3): 539-551[2] Johnston A H, Swimm R T, Miyahira T F. IEEE Trans. Nucl. Sci., 2010, 57(6): 3279-3287[3] Zebrev G I, Gorbunov M S. IEEE Trans. Nucl. Sci., 2009, 56(4): 2230-2236[4] HE Bao-Ping, YAO Zhin-Bin, ZHANG Feng-Qi. Chinese Physics C, 2009, 33(06): 436-439 (in Chinese)[5] MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu et al. Chinese Physics C, 2008, 32(06): 442-445 (in Chinese)[6] McLain M, Barnaby H J, Holbert K E et al. IEEE Trans. Nucl. Sci., 2007, 54(6): 2210-2217[7] Barnaby H J. IEEE Trans. Nucl. Sci., 2006, 53(6): 3103-3121[8] McLain M, Barnaby H J, Holbert K E et al. IEEE Trans. Nucl. Sci., 2007, 54(6): 2210-2217[9] McWhorter P J, Winokur P S. Appl. Phys. Lett., 2008, 48(2): 133135[10] Pease R L, Schrimpf R D, Fleetwood D M. IEEE Trans. Nucl. Sci., 2009, 56(4): 1894-1908[11] Fleetwood D M, Winkour P S, Barnes C E et al. Radiat. Phys. Chem., 1994, 33(6): 129-136[13] Witczak S C, Lacoe R C, Osborn J V et al. IEEE Trans. Nucl. Sci., 2005, 52(6): 26022608[12] Oldham T R, Lelis A J, McLean F B. IEEE Trans. Nucl. Sci., 1986, 33(6): 1894-1908[14] MIL-STD883H Test Method 1019.8, issued February 2010 by Commander, Defense Supply Center Columbus ATTN

  • References

    [1] Pease R L. IEEE Trans. Nucl. Sci., 2003, 50(3): 539-551[2] Johnston A H, Swimm R T, Miyahira T F. IEEE Trans. Nucl. Sci., 2010, 57(6): 3279-3287[3] Zebrev G I, Gorbunov M S. IEEE Trans. Nucl. Sci., 2009, 56(4): 2230-2236[4] HE Bao-Ping, YAO Zhin-Bin, ZHANG Feng-Qi. Chinese Physics C, 2009, 33(06): 436-439 (in Chinese)[5] MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu et al. Chinese Physics C, 2008, 32(06): 442-445 (in Chinese)[6] McLain M, Barnaby H J, Holbert K E et al. IEEE Trans. Nucl. Sci., 2007, 54(6): 2210-2217[7] Barnaby H J. IEEE Trans. Nucl. Sci., 2006, 53(6): 3103-3121[8] McLain M, Barnaby H J, Holbert K E et al. IEEE Trans. Nucl. Sci., 2007, 54(6): 2210-2217[9] McWhorter P J, Winokur P S. Appl. Phys. Lett., 2008, 48(2): 133135[10] Pease R L, Schrimpf R D, Fleetwood D M. IEEE Trans. Nucl. Sci., 2009, 56(4): 1894-1908[11] Fleetwood D M, Winkour P S, Barnes C E et al. Radiat. Phys. Chem., 1994, 33(6): 129-136[13] Witczak S C, Lacoe R C, Osborn J V et al. IEEE Trans. Nucl. Sci., 2005, 52(6): 26022608[12] Oldham T R, Lelis A J, McLean F B. IEEE Trans. Nucl. Sci., 1986, 33(6): 1894-1908[14] MIL-STD883H Test Method 1019.8, issued February 2010 by Commander, Defense Supply Center Columbus ATTN

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1. Sun, Y., Liu, Z., Fu, J. et al. Degradation and annealing characteristics of NPN SiGe HBT exposed to heavy ions irradiation[J]. Radiation Physics and Chemistry, 2019. doi: 10.1016/j.radphyschem.2019.108433
2. Gao, W., Wu, M., Tang, Y. et al. Total-Ionization-Dose Radiation-Induced Noise Modeling and Analysis of a 2k×2k 4T CMOS Active Pixel Sensor for Space Applications[J]. IEEE Sensors Journal, 2018, 18(19): 8053-8063. doi: 10.1109/JSEN.2018.2860787
3. Wang, Q.-Q., Liu, H.-X., Wang, S.-L. et al. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates[J]. Nuclear Science and Techniques, 2017, 28(10): 151. doi: 10.1007/s41365-017-0295-7
4. Wang, Q.-Q., Liu, H.-X., Chen, S.-P. et al. Effects of total dose irradiation on the threshold voltage of H-gate SOI NMOS devices[J]. Nuclear Science and Techniques, 2016, 27(5): 117. doi: 10.1007/s41365-016-0110-x
Get Citation
HE Bao-Ping, YAO Zhi-Bin, SHENG Jiang-Kun, WANG Zu-Jun, HUANG Shao-Yan, LIU Min-Bo and XIAO Zhi-Gang. Study of the dose rate effect of 180 nm nMOSFETs[J]. Chinese Physics C, 2015, 39(1): 016004. doi: 10.1088/1674-1137/39/1/016004
HE Bao-Ping, YAO Zhi-Bin, SHENG Jiang-Kun, WANG Zu-Jun, HUANG Shao-Yan, LIU Min-Bo and XIAO Zhi-Gang. Study of the dose rate effect of 180 nm nMOSFETs[J]. Chinese Physics C, 2015, 39(1): 016004.  doi: 10.1088/1674-1137/39/1/016004 shu
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Received: 2014-03-17
Revised: 1900-01-01
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Study of the dose rate effect of 180 nm nMOSFETs

    Corresponding author: HE Bao-Ping,
  • Received Date: 2014-03-17
  • Accepted Date: 1900-01-01
  • Available Online: 2015-01-05

Abstract: Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A "true" dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

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