Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

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HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia, QIAN Cong, TIAN Hao and WANG Xi. Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation[J]. Chinese Physics C, 2007, 31(4): 388-390.
HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia, QIAN Cong, TIAN Hao and WANG Xi. Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation[J]. Chinese Physics C, 2007, 31(4): 388-390. shu
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Received: 2006-07-14
Revised: 2006-08-28
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Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

    Corresponding author: HE Wei,
  • Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Abstract: The total dose response characteristics of the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers have been improved by implanting silicon ion into the BOX layers. NMOS/SOI transistors with enclosed-gate structure fabricated in SIMOX wafers were exposed to 60Co γ-ray radiation. The total-dose radiation hardness of the BOX layers is characterized by the current voltage (I-V) measurements. The experimental results show that the implantation of silicon ion into the BOX layers can greatly reduce back channel threshold voltage shifts (ΔVth), which increase the BOX layer hardness to total-dose irradiation.

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