Radiation Damage Tests of Silicon Microstrip Detector

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Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. Chinese Physics C, 1997, 21(4): 292-296.
Gu Weixin. Radiation Damage Tests of Silicon Microstrip Detector[J]. Chinese Physics C, 1997, 21(4): 292-296. shu
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Received: 1900-01-01
Revised: 1900-01-01
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Radiation Damage Tests of Silicon Microstrip Detector

    Corresponding author: Gu Weixin,
  • Institute of High Energy Physics,The Chinese Academy of Sciences,Beeijing 1000392 Fermilab,Batavia,ILL 60510,U.S.A.

Abstract: This paper measured the plateau curve,height of pulse related with bias voltage of silicon microstrip detector which was before and after exposed,and the leakage current as well as size of ‘black hole’after exposed

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