Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

SONG Ying-Hui; ZHANG Yu-Lin; WEI Qiang; KONG Xiang-Dong

Chinese Physics C> 2005, Vol. 29> Issue(12) : 1219-1224

Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

Institute of Electron Beam,Shandong University,Ji'nan 250061,China

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Abstract：
The complex scattering process of the high-energy(50keV≤E₀≤100keV) electron beams with the Gaussian distribution in resist is simulated by Monte Carlo method with different energy range models. The backscatter coefficient of electrons and energy deposition distributions are presented under different exposure conditions. The simulation results are in good agreement with the experimental data. It is found that, in the energy range 50keV≤E₀≤100keV, higher electron beam energy, thinner resist and lower substrate's atom number will cause lower proximity effect, which agrees with the corresponding experiment. The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.

References

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SONG Ying-Hui, ZHANG Yu-Lin, WEI Qiang and KONG Xiang-Dong. Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist[J]. Chinese Physics C, 2005, 29(12): 1219-1224.

SONG Ying-Hui, ZHANG Yu-Lin, WEI Qiang and KONG Xiang-Dong. Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist[J]. Chinese Physics C, 2005, 29(12): 1219-1224. shu

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Received: 2005-01-04
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

Corresponding author: SONG Ying-Hui,

Institute of Electron Beam,Shandong University,Ji'nan 250061,China

Received Date: 2005-01-04

Accepted Date: 1900-01-01

Available Online: 2005-12-05

Abstract: The complex scattering process of the high-energy(50keV≤E₀≤100keV) electron beams with the Gaussian distribution in resist is simulated by Monte Carlo method with different energy range models. The backscatter coefficient of electrons and energy deposition distributions are presented under different exposure conditions. The simulation results are in good agreement with the experimental data. It is found that, in the energy range 50keV≤E₀≤100keV, higher electron beam energy, thinner resist and lower substrate's atom number will cause lower proximity effect, which agrees with the corresponding experiment. The present results not only can help to optimize the exposure conditions in Electron Beam Lithography, but also supply more accurate data for proximity effect correction.

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Monte Carlo Simulation of High-energy Electron Beam Exposure in Resist

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