Study of Defects in Silicon Irradiated With High Energy Ar Ions

Zhu Zhiyong; Hou Mingdong; Jin Yunfan; Li Changlin; Liu Changlong; Zhang Chonghong; Sun Youmei

Chinese Physics C> 1999, Vol. 23> Issue(12) : 1248-1252

Study of Defects in Silicon Irradiated With High Energy Ar Ions

Institute of,Wodern Physics,The Chinese Academy of Sciences,Lanzhou 730000

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Abstract：
Single crystalline silicon specimens are irradiated at room temperatUre with 750MeV argon ions. Positron lifetime, electron paramagnetic resonance as well as infrared optical absorphon measurementS are conducted tO study the radiahon induced defects in the specimens. It is found that neutral divacancies are the main vacancy clusters induced by the irradiations. UP to 4.3×10¹⁴ions/cm² no amorphous phase is detected. At the end of the range the divacancy concentrahon increases dramahcally with increasing dose whereas in the electronic processes dominating area the concentration of divacancy saturates. It is therefore proposed that the radiahon induced defects can be annealed by the energy deposihon through electronic processes.

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Zhu Zhiyong, Hou Mingdong, Jin Yunfan, Li Changlin, Liu Changlong, Zhang Chonghong and Sun Youmei. Study of Defects in Silicon Irradiated With High Energy Ar Ions[J]. Chinese Physics C, 1999, 23(12): 1248-1252.

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Received: 1998-12-11
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Study of Defects in Silicon Irradiated With High Energy Ar Ions

Corresponding author: Zhu Zhiyong,

Institute of,Wodern Physics,The Chinese Academy of Sciences,Lanzhou 730000

Received Date: 1998-12-11

Accepted Date: 1900-01-01

Available Online: 1999-12-05

Abstract: Single crystalline silicon specimens are irradiated at room temperatUre with 750MeV argon ions. Positron lifetime, electron paramagnetic resonance as well as infrared optical absorphon measurementS are conducted tO study the radiahon induced defects in the specimens. It is found that neutral divacancies are the main vacancy clusters induced by the irradiations. UP to 4.3×10¹⁴ions/cm² no amorphous phase is detected. At the end of the range the divacancy concentrahon increases dramahcally with increasing dose whereas in the electronic processes dominating area the concentration of divacancy saturates. It is therefore proposed that the radiahon induced defects can be annealed by the energy deposihon through electronic processes.

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Study of Defects in Silicon Irradiated With High Energy Ar Ions

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