Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

  • The X ray standing wave experiment method is established with the double-crystal monochromator and precision 2-circle goniometer at Beijing Synchrotron Radiation Facility. It is used combined with the X-ray diffraction, to investigate the heterostructure of super thin Ge atomic layer within Si crystals. The results show that the Ge x Si1-x alloy layer with average x=0.13 was formed in the Si crystal sample due to the segregation of Ge atoms during the preparation. Due to the diffusion of Ge atoms to the crystal surface, the Gex Si1-x alloy layer was disappeared and nearly pure Ge layer was formed on the Si crystal surface after annealing at 650℃.
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  • [1] . Batterman B W,Cole H.Rev.Mod.Phys.,1964,36:6812. Zegenhagen J.Surf.Sci.Rep.,1993,18:1993. Bedzyk M J,Bilderback D H,Bommarito G M et al.Science,1988,241:17884. Bedzyk M J,Bommarito G M,Schildkaut J S.Phys.Rev.Lett.,1989,62:13765. Woodruff D P.Progress in Surface Science,1998,57:16. Warren B E.X-Ray Diffraction.New York:Dover Publications,Inc.,19907. Matsushita T,Hashizume H.In Handbook of Synchrotron Radiation,ed.E.Koch,North Holland Publishing Company,Amsterdam,New York,Oxford,1983,Chapter 4,X-Ray Monochromator. 261—3148. JIA Quan-Jie,ZHENG Wen-Li,WANG Zhou-Guang et al.Acta Physica Sinica(overseas edition),1998,7:695—7029. ZHENG Wen-Li.The Performance of 4W1C Beamline at Beijing Synchrotron Radiation Facility and the Study of Ge Thin Heterostructures in Si Crystal by Synchrotron Radiation.MS thesis(in Chinese)2000(郑文莉.北京同步辐射装置4W1C光束线的性能研究及Si中Ge薄层结构的同步辐射研究.硕士论文.2000)
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JIANG Xiao-Ming, JIA Quan-Jie, HU Tian-Dou, HUANG Yu-Ying, ZHENG Wen-Li, HE Wei, XIAN Ding-Chang, SHI Bin, JIANG Zui-Min and WANG Xun. Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique[J]. Chinese Physics C, 2001, 25(6): 588-594.
JIANG Xiao-Ming, JIA Quan-Jie, HU Tian-Dou, HUANG Yu-Ying, ZHENG Wen-Li, HE Wei, XIAN Ding-Chang, SHI Bin, JIANG Zui-Min and WANG Xun. Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique[J]. Chinese Physics C, 2001, 25(6): 588-594. shu
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Received: 2000-05-26
Revised: 1900-01-01
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Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

    Corresponding author: JIANG Xiao-Ming,
  • Institute of High Energy Physics, CAS, Beijing 100039,China1 Surface Physics National Key Lab., Fudan University, Shanghai 200433,China

Abstract: The X ray standing wave experiment method is established with the double-crystal monochromator and precision 2-circle goniometer at Beijing Synchrotron Radiation Facility. It is used combined with the X-ray diffraction, to investigate the heterostructure of super thin Ge atomic layer within Si crystals. The results show that the Ge x Si1-x alloy layer with average x=0.13 was formed in the Si crystal sample due to the segregation of Ge atoms during the preparation. Due to the diffusion of Ge atoms to the crystal surface, the Gex Si1-x alloy layer was disappeared and nearly pure Ge layer was formed on the Si crystal surface after annealing at 650℃.

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