1kW S-Band RF Solid State Amplifier for BEPC Linac Microwave Driver System

ZHAO Feng-Li; HUANG Yong-Qing

Chinese Physics C> 2003, Vol. 27> Issue(11) : 1031-1033

1kW S-Band RF Solid State Amplifier for BEPC Linac Microwave Driver System

ZHAO Feng-Li ^, ,
HUANG Yong-Qing

Institute of High Energy Physics, CAS, Beijing 100039, China2 Institute of Beijing Radio Measurement, Beijing 100854, China

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Abstract：
This paper presents the development of a 1kW S-Band RF Solid State Amplifier (SSA) for the BEPC Linac. IkW peak power with a pulse width of 2-10μs under low voltage operation is achieved by combining eight 160W high power Solid State Amplifiers using a low-loss(0.3dB) combiner. Other key performance parameters are: RF phase drift during pulse ≤±1 degree, RF rise time/fall time is 88ns/40ns, RF pulse flatness is 0.7 % , and RF power stability is 0.1dB.
References

[1] Hanczor M, Kumar M. 12kW S–Band Solid State Transmitter for Modern Radar Systems, IEEE, 1993
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ZHAO Feng-Li and HUANG Yong-Qing. 1kW S-Band RF Solid State Amplifier for BEPC Linac Microwave Driver System[J]. Chinese Physics C, 2003, 27(11): 1031-1033.

ZHAO Feng-Li and HUANG Yong-Qing. 1kW S-Band RF Solid State Amplifier for BEPC Linac Microwave Driver System[J]. Chinese Physics C, 2003, 27(11): 1031-1033. shu

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Received: 2003-04-01
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

1kW S-Band RF Solid State Amplifier for BEPC Linac Microwave Driver System

ZHAO Feng-Li ^,
HUANG Yong-Qing

Corresponding author: ZHAO Feng-Li,

Institute of High Energy Physics, CAS, Beijing 100039, China2 Institute of Beijing Radio Measurement, Beijing 100854, China

Received Date: 2003-04-01
Accepted Date: 1900-01-01
Available Online: 2003-11-05

Abstract: This paper presents the development of a 1kW S-Band RF Solid State Amplifier (SSA) for the BEPC Linac. IkW peak power with a pulse width of 2-10μs under low voltage operation is achieved by combining eight 160W high power Solid State Amplifiers using a low-loss(0.3dB) combiner. Other key performance parameters are: RF phase drift during pulse ≤±1 degree, RF rise time/fall time is 88ns/40ns, RF pulse flatness is 0.7 % , and RF power stability is 0.1dB.