Impact factor of Chinese Physics C is 3.6 in 2023 Impact factor of Chinese Physics C is 3.6 in 2022 2021 Impact Factor 2.944
Advanced Search
Chinese Physics C> 2001, Vol. 25> Issue(12) : 1231-1237 

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

  •  Institute of High Energy Physics, CAS, Beijing 100039, China2 Surface Physics Laboratory, Fudan University, Shanghai 200433, China

  • Synchrotron radiation X-ray reflection method is used to study the depth distribution of Ge atoms in Si crystals caused by surface segregation during the MBE growth. The distribution of Ge atoms in Si crystal is found to have asymmetric exponential shape by simulating the experimental reflectivity based on X-ray reflection theory and Parratt method. The distribution decay lengths forward and backward along the growth direction are obtained as 8A and 3A, respectively, and do not change with different thicknesses of the Ge layers. The influences on X-ray reflectivity of different parameters, such as the thickness of the Si cap layer, the decay length, the surface roughness, and the thickness of SiO2 over the surface are discussed briefly.
  • 加载中

  • References

    [1] . CHANG L L ,Ploog K .Molecular Beam Epitaxy and Heterostructures,Martinus Nijhoff Publishers,1985 2. Slijkerman W F J et al.J. Appl.Phys.,1990,68:51053. Izumi K et al.Jpn.J. Appl.Phys.,1993,32:17724. Gossmann H J et al.Appl.Phys.Lett.,1994,64:3125. XIU LiSong et al.Chinese Science Bulletin,1996,41(7):559—562 6. JIANG X ,ZHENG W ,WU J et al.Rev.Sci.Instrum.,1995,66:1694—1695;ZHENG W ,JIANG X et al.Nucl.Instru.and Meth.,1997,B129:543—5477. LU X ,JIANG Z ,HUANG D et al.J. Cryst.Growth,1996,158:1698. JIA Q ,ZHENG W ,WANG Z ,WANG J et al.Acta Physica Sinica(Oversea edition),1998,7:695 9. JIA Quan-Jie,JIANG XiaoMing,JIANG ZuiMin.Physical Testing and Chemical Analysis,PartA :Physical Testing.1998,34(8):3(in Chinese)(贾全杰,姜晓明,蒋最敏.理化检验(物理分册).1998,34(8):3)10. ZHOU X ,and CHEN S .Phys.Rep.,1995,257:223 11. Parratt. Phys.Rev.,1954,95:35912. ZHENG WenLi.Study of Performance of Beamline 4W1C at Beijing Synchrotron Radiation Facility and Study of Ge Thin-layer Structure by Synchrotron Radiation.Master′s Degree Thesis of Institute of High Energy Physics,CAS,2000(in Chinese)(郑文莉.北京同步辐射装置4W1C光束线的性能研究及Si中Ge薄层结构的同步辐射研究.中国科学院高能物理研究所硕士学位论文,2000)

  • Access

    加载中

Get Citation
ZHENG Wen-Li, JIA Quan-Jie, JIANG Xiao-Ming and JIANG Zui-Min. Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection[J]. Chinese Physics C, 2001, 25(12): 1231-1237.
ZHENG Wen-Li, JIA Quan-Jie, JIANG Xiao-Ming and JIANG Zui-Min. Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection[J]. Chinese Physics C, 2001, 25(12): 1231-1237. shu
Milestone
Received: 2001-01-12
Revised: 1900-01-01
Article Metric

Article Views(3974)
PDF Downloads(676)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

    Corresponding author: ZHENG Wen-Li,
  • Institute of High Energy Physics, CAS, Beijing 100039, China2 Surface Physics Laboratory, Fudan University, Shanghai 200433, China
  • Received Date: 2001-01-12
  • Accepted Date: 1900-01-01
  • Available Online: 2001-12-05

Abstract: Synchrotron radiation X-ray reflection method is used to study the depth distribution of Ge atoms in Si crystals caused by surface segregation during the MBE growth. The distribution of Ge atoms in Si crystal is found to have asymmetric exponential shape by simulating the experimental reflectivity based on X-ray reflection theory and Parratt method. The distribution decay lengths forward and backward along the growth direction are obtained as 8A and 3A, respectively, and do not change with different thicknesses of the Ge layers. The influences on X-ray reflectivity of different parameters, such as the thickness of the Si cap layer, the decay length, the surface roughness, and the thickness of SiO2 over the surface are discussed briefly.

    HTML

Reference (1)

目录

Link
IOPScience
SCOAP3
arXiv
Chinese Physical Society
Journal information
Introduction
Editorial Board
Others
Subscribe
Contact us
QQ: 1307685413
Tel: +86-010-88235947
Fax: +86-010-88233126
E-mail: cpc@ihep.ac.cn

  • CPC Website

  • IOP Website

  • CPC WeChat

Copyright © Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Beijing 100049, China 京ICP备05002789号-1

Supported by: Beijing Renhe Information Technology Co. Ltd  E-mail: info@rhhz.net

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return