Study on Irradiation Damage of Bi-Doped PbWO<SUB>4</SUB> Crystal

LIANG Ling; GU Mu; DUAN Yong; MA Xiao-Hui; LIU Feng-Song; WU Xiang-Hui; QIU Long-Qing; CHEN Ming-Nan; LIAO Jing-Ying; SHEN Ding-Zhong; ZHANG Xin; GONG Bo; XUE Xuan-Ping

Chinese Physics C> 2003, Vol. 27> Issue(6) : 526-531

Study on Irradiation Damage of Bi-Doped PbWO₄ Crystal

Department of Physics,Tongji University,Shanghai 200092,China2 Laboratory of Functional Inorganic Materials,Chinese Academy of Sciences,Shanghai 200050,China3 Shanghai Key Laboratory of Metal-Functional Materials,Shanghai 200940,China

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Abstract：
The luminescence and point defects of pure lead tungstate crystals (PbWO₄) and Bismuth (Bi) doping crystal (PbWO₄:Bi)grown by modified Bridgman method are studied. It is found that irradiation results in the great change of the transmission and X-ray excited emission after γ-ray irradiation about 4 Mrad dose. The defects in PbWO₄ crystal have been studied by means of positron annihilation lifetime and X-ray photoelectron spectra. The results show that Bi dopant suppresses the concentrations of positron capture centers and low-valent oxygen ions.After γ-ray irradiation,in the pure crystal the concentration of lead vacancy (V_Pb) is decreased and that of low-valent oxygen increased; on the contrary,in Bi dopant crystal the concentrations of positron capture centers increased and that of low-valent oxygen ions suppressed. It is tentatively proposed that Bi³⁺ dopants would mainly occupy the sites of lead vacancies resulted from Pb volatilization. And irradiation changes the chemical valence of Bi element,which is Bi³⁺→Bi⁵⁺.The Bi⁵⁺ will replace the lattice W⁶⁺ ions and it will cause some (WO₄)^2－ replaced by (BiO₃+V_O)^－.

References

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LIANG Ling, GU Mu, DUAN Yong, MA Xiao-Hui, LIU Feng-Song, WU Xiang-Hui, QIU Long-Qing, CHEN Ming-Nan, LIAO Jing-Ying, SHEN Ding-Zhong, ZHANG Xin, GONG Bo, XUE Xuan-Ping, Study on Irradiation Damage of Bi-Doped PbWO₄ Crystal[J]. Chinese Physics C, 2003, 27(6): 526-531.

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Received: 2002-11-15
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study on Irradiation Damage of Bi-Doped PbWO₄ Crystal

Corresponding author: GU Mu,

Department of Physics,Tongji University,Shanghai 200092,China2 Laboratory of Functional Inorganic Materials,Chinese Academy of Sciences,Shanghai 200050,China3 Shanghai Key Laboratory of Metal-Functional Materials,Shanghai 200940,China

Received Date: 2002-11-15
Accepted Date: 1900-01-01
Available Online: 2003-06-05

Abstract: The luminescence and point defects of pure lead tungstate crystals (PbWO₄) and Bismuth (Bi) doping crystal (PbWO₄:Bi)grown by modified Bridgman method are studied. It is found that irradiation results in the great change of the transmission and X-ray excited emission after γ-ray irradiation about 4 Mrad dose. The defects in PbWO₄ crystal have been studied by means of positron annihilation lifetime and X-ray photoelectron spectra. The results show that Bi dopant suppresses the concentrations of positron capture centers and low-valent oxygen ions.After γ-ray irradiation,in the pure crystal the concentration of lead vacancy (V_Pb) is decreased and that of low-valent oxygen increased; on the contrary,in Bi dopant crystal the concentrations of positron capture centers increased and that of low-valent oxygen ions suppressed. It is tentatively proposed that Bi³⁺ dopants would mainly occupy the sites of lead vacancies resulted from Pb volatilization. And irradiation changes the chemical valence of Bi element,which is Bi³⁺→Bi⁵⁺.The Bi⁵⁺ will replace the lattice W⁶⁺ ions and it will cause some (WO₄)^2－ replaced by (BiO₃+V_O)^－.