Simulation of the Penetration Range Distribution for Nitrogen Ions Implanted into the Plant Seed at Low Energy

WANG Lin-Xiang; ZHU Heng-Jiang; WANG Shi-Heng; WANG Xian-Ming

Chinese Physics C> 2007, Vol. 31> Issue(3) : 311-315

Simulation of the Penetration Range Distribution for Nitrogen Ions Implanted into the Plant Seed at Low Energy

Department of Physics, Xinjiang Normal University, Urumuqi 830054, China2 Department of Physics, Xinjiang University, Urumuqi 830046, China

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Abstract：
Following the widespread application of ion beam biological technology, more experimental researches on low energy ion impletation into plant seeds has been conducted. In the studies of the physical mechanism, the emphasis are put on the depth and concentration distribution of the ions implanted into the seeds at low energy. The calculations directly using the LSS theory and the TRIM program for the distribution of ions implanted into seeds at low energy are not in agreement with the experimental results. With considering targets and correctting LSS theory according to the distinguishing texture of plant seeds, we calculated the penetration range distribution for vanadium ions implanted into peanut seed at 200keV and for titanium ions energy implanted into the cotton seed at 20keV in two dimension approximation by using the Monte-Carlo method. The calculation results are in agreemante with experiments. After implated into the peanut seed or the cotton seed, the nitrogen ion range distribution, whith coold not be measured so far, was also calculated with the same initial condition and theory model. This could be a preliminary method for calculation of the range distribution of nitrogen implated into seeds at low energy.

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WANG Lin-Xiang, ZHU Heng-Jiang, WANG Shi-Heng and WANG Xian-Ming. Simulation of the Penetration Range Distribution for Nitrogen Ions Implanted into the Plant Seed at Low Energy[J]. Chinese Physics C, 2007, 31(3): 311-315.

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Received: 2006-04-23
Revised: 2006-09-20

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沈阳化工大学材料科学与工程学院沈阳 110142

Simulation of the Penetration Range Distribution for Nitrogen Ions Implanted into the Plant Seed at Low Energy

Corresponding author: WANG Lin-Xiang,

Department of Physics, Xinjiang Normal University, Urumuqi 830054, China2 Department of Physics, Xinjiang University, Urumuqi 830046, China

Received Date: 2006-04-23

Accepted Date: 2006-09-20

Available Online: 2007-03-05

Abstract: Following the widespread application of ion beam biological technology, more experimental researches on low energy ion impletation into plant seeds has been conducted. In the studies of the physical mechanism, the emphasis are put on the depth and concentration distribution of the ions implanted into the seeds at low energy. The calculations directly using the LSS theory and the TRIM program for the distribution of ions implanted into seeds at low energy are not in agreement with the experimental results. With considering targets and correctting LSS theory according to the distinguishing texture of plant seeds, we calculated the penetration range distribution for vanadium ions implanted into peanut seed at 200keV and for titanium ions energy implanted into the cotton seed at 20keV in two dimension approximation by using the Monte-Carlo method. The calculation results are in agreemante with experiments. After implated into the peanut seed or the cotton seed, the nitrogen ion range distribution, whith coold not be measured so far, was also calculated with the same initial condition and theory model. This could be a preliminary method for calculation of the range distribution of nitrogen implated into seeds at low energy.

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Simulation of the Penetration Range Distribution for Nitrogen Ions Implanted into the Plant Seed at Low Energy

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