ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION

LIU Shi-Jie; WU Yue; SHENG Kang-Long; LI Chun-Ying

Chinese Physics C> 1989, Vol. 13> Issue(6) : 481-486

ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION

Institute of High Energy,Academia Sinica,Beijing2 Institute of Nuclear Research Academia Sinica,Shanghai3 North China Electro-Optics Research Institute,Beijing

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Abstract：
The elastic recoil detection (ERD) by using a 2.0—2.5MeV ⁴He ,ion beam has been employed to detect the depth profiling of hydrogen in the Silicon oxide and silicon nitride films.The correlation between the hydrogen content and the deposition condition is given.Maximum probing depth,detection limit and depth resolution are discussed under our experiment conditions.

References

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LIU Shi-Jie, WU Yue, SHENG Kang-Long and LI Chun-Ying. ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION[J]. Chinese Physics C, 1989, 13(6): 481-486.

LIU Shi-Jie, WU Yue, SHENG Kang-Long and LI Chun-Ying. ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION[J]. Chinese Physics C, 1989, 13(6): 481-486. shu

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Received: 1900-01-01
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

ANALYSIS DEPTH PROFILING IN MATERALS BY ELASTIC RECOIL DETECTION

Corresponding author: LIU Shi-Jie,

Institute of High Energy,Academia Sinica,Beijing2 Institute of Nuclear Research Academia Sinica,Shanghai3 North China Electro-Optics Research Institute,Beijing

Received Date: 1900-01-01
Accepted Date: 1900-01-01
Available Online: 1989-06-05

Abstract: The elastic recoil detection (ERD) by using a 2.0—2.5MeV ⁴He ,ion beam has been employed to detect the depth profiling of hydrogen in the Silicon oxide and silicon nitride films.The correlation between the hydrogen content and the deposition condition is given.Maximum probing depth,detection limit and depth resolution are discussed under our experiment conditions.