Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon

LIU Chang-Long

Chinese Physics C> 2001, Vol. 25> Issue(12) : 1238-1244

Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon

LIU Chang-Long ^,

Institute of Modern Physics, The Chinese Academy of Sciences, Lanzhou 730000, China2 School of Electronic Engineering Information Technology & Mathematics, University of Surrey, GU2 7XH,Guildford, Surrey, UK

Abstract
HTML
Reference
Related

PDF

Abstract：
N-type crystalline Si (100) implanted with 5keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO₂ layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code.

References

[1]

. Claverie A ,Giles L F ,Omri M et al.Nucl.Instru.Meths.,1999,B147:1—122. Collart E J, Weemers K ,Cowern N E B et al.Nucl.Instru.Meths.,1998,B139:98—1073. Stolk P A ,Gossmann H J, Eaglesham D J et al.J.Appl.Phys.,1997,8(9):6031—60504. Claverie A ,Laanab L ,Bonafos C et al.Nucl.Instru.Meths.,1995,B96,202—209 5. Cowern N E B ,Cacciato A ,Custer J S et al.Appl.Phys.Lett.,1996,68(8):1150—11536. Downey D F ,Chow J W ,Ishida E et al.Appl.Phys.Lett.,1998,79(9):1263—1265 7. Cowern N E B ,Alquier D ,Omri M et al. Nucl.Instru.Meths.,1999,B148:257—261

[1]	WANG Zhuo , GAO Yu-Jie , LI Meng-Kai , ZHU Fei , ZHANG Da-Cheng , LIU Chang-Long . He and H sequential implantation induced surface blistering and exfoliation of Si covered with oxide layer. Chinese Physics C, 2013, 37(1): 016001. doi: 10.1088/1674-1137/37/1/016001
[2]	WANG Fang-Fang , ZHU Jing-Tao , ZHONG Qi , WANG Zhan-Shan , Philippe Jonnard , Karine Le , Michel Andr , Michel Fialin . Influence of working gas pressure on the performance of W/Si multilayers. Chinese Physics C, 2012, 36(9): 909-914. doi: 10.1088/1674-1137/36/9/021
[3]	Khudair Falih , ZHANG Jin-Fu , BAI Hong-Bo . Mixed symmetry states and isospin excitation in the N=Z nucleus ²⁸Si. Chinese Physics C, 2009, 33(S1): 46-48. doi: 10.1088/1674-1137/33/S1/015
[4]	SONG Ming-Tao , SHENG Li-Na , WANG Zhi-Guang , HE Yuan , GAO Da-Qing , YANG Xiao-Tian , LIU Jie , SU Hong , MAN Kai-Di . Development of an Intermediate Energy Heavy-Ion Micro-Beam Irradiation System. Chinese Physics C, 2008, 32(S1): 259-261.
[5]	ZHAI Chen-Yang , SUN Wei-Li , Efrem S , ZHANG Ben-Ai . ²⁸Si-Nucleon Scattering Analysis by the Coupled-Channel Optical Model with Dispersion Relation. Chinese Physics C, 2007, 31(3): 240-246.
[6]	LUO Wen-Yun , WANG Chao-Zhuang , HE Xin-Fu , FAN Sheng , HUANG Xiao-Long , WANG Chuan-Shan . Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs. Chinese Physics C, 2006, 30(11): 1088-1090.
[7]	JIN Yun-Fan , WANG Zhi-Guang . Ion Velocity Effect in the Process of the Damage Creation in Solid Materials Induced by Swift Heavy Ion Irradiations. Chinese Physics C, 2005, 29(11): 1115-1120.
[8]	LIU Chang-Long , LU Yi-Ying , YIN LI . Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon. Chinese Physics C, 2005, 29(11): 1107-1111.
[9]	ZHANG Guo-Guang , OUYANG Xiao-Ping , ZHANG Jian-Fu , LI Bei-Jing , SONG Ji-Wen , ZHANG Qian-Mei . A Si-PIN Detector Used for DPF Neutron Yield Measurement. Chinese Physics C, 2004, 28(6): 634-636.
[10]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[11]	ZHONG Xian-Hui , TAN Yu-Hong , NING Ping-Zhi . Shell Anomalies of Mg, Si and S Isotopes. Chinese Physics C, 2003, 27(9): 794-797.
[12]	TIAN Hui-Xian , JIN Yun-Fan , ZHU Zhi-Yong , LIU Chang-Long , SUN You-Mei , WANG Zhi-Guang , LIU Jie , CHEN Xiao-Xi , WANG Yan-Bin , HOU Ming-Dong . Irradiation Effects in Polycarbonate Induced by 2.1GeV Kr Ions. Chinese Physics C, 2002, 26(4): 435-440.
[13]	LI Xi-Guo , Marcello Baldo , SONG Jian-Jun , LIU Fang . Diffusion Equations in Lie Group Manifold. Chinese Physics C, 2001, 25(1): 86-88.
[14]	JIN YunFan , YANG Ru , LIU ChangLong , YAO JiangHong . Irradiation Effect in C₆₀ Films Induced By Low Energy Ions. Chinese Physics C, 2000, 24(1): 82-86.
[15]	Cai Xiangzhou , Feng Jun , Shen Wenqing , Ma Yugang , Wang Jiansong , Ye Wei . In-medium Nucleon-Nucleon Collision Cross Section and Its Effecton Total Nuclear Reaction Cross Section. Chinese Physics C, 1998, 22(9): 830-835.
[16]	Han Rongdian , Weng Huimin , Zhou Xianyi , Xu Jihua , Zhu Jingsheng , Li Xiaoguang , Sha Jian , Wang Jingcheng . Research for Crystallization of Metallic Glass Pd_79.5Ni₄Si_16.5. Chinese Physics C, 1993, 17(S1): 33-37.
[17]	Zheng Jiwen , Zheng Pingzi , Liu Guoxing , Chen Keliang , Wang Sufang , Bai Xingping , Yu Xian , Zhang Huanqiao , Xu Jincheng , Liu Zuhua , Ruan Ming , Lu Jun , Xu Kan . Measurement of Complete Fusion Excitation Function of ¹⁶O + ²⁸Si Reaction. Chinese Physics C, 1992, 16(S3): 227-234.
[18]	ZHENG Ji-Wen , ZHENG Zi-Ping , LIU Guo-Xing , CHEN Ke-Liang , WANG Su-Fang , BAI Xing-Ping , YU Xian , ZHANG Huan-Qiao , XU Jin-Cheng , LIU Zu-Hua , RUAN Ming , LV Jun , XU Kan . Measurement of the Complets Fusion Excitation Function for the ¹⁶O+²⁸Si Reaction. Chinese Physics C, 1992, 16(7): 640-646.
[19]	LIU Jian-Ye , TAN Nan-Hong , QIAO Wei-Min . THE ROLE OF NUCLEAR STRUCTURE EFFECTS ON THE NUCLEON EXCHANGE PROCESS IN DISSIPATIVE HEAVY-ION COLLISIONS. Chinese Physics C, 1989, 13(11): 1032-1038.
[20]	ZHAO EN-GUANG , LIU BO , LI QING-RUN . THE ISOBAR CONFIGURATION IN NUCLEI AND ITS INFLUENCE ON THE REACTION （p,π⁺）. Chinese Physics C, 1979, 3(6): 708-715.

Access

Get Citation

LIU Chang-Long. Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon[J]. Chinese Physics C, 2001, 25(12): 1238-1244.

LIU Chang-Long. Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon[J]. Chinese Physics C, 2001, 25(12): 1238-1244. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2001-02-09
Revised: 1900-01-01

Article Metric

Article Views(3214)
PDF Downloads(610)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon

Corresponding author: LIU Chang-Long,

Institute of Modern Physics, The Chinese Academy of Sciences, Lanzhou 730000, China2 School of Electronic Engineering Information Technology & Mathematics, University of Surrey, GU2 7XH,Guildford, Surrey, UK

Received Date: 2001-02-09

Accepted Date: 1900-01-01

Available Online: 2001-12-05

Abstract: N-type crystalline Si (100) implanted with 5keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO₂ layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code.

HTML

Reference (1)

Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article