Application of stratified implantation for silicon micro-strip detectors

Get Citation
LI Hai-Xia, LI Zhan-Kui, WANG Fang-Cong, LI Rong-Hua, CHEN Cui-Hong, WANG Xiu-Hua, RONG Xin-Juan, LIU Feng-Qiong, WANG Zhu-Sheng, LI Chun-Yan, ZU Kai-Ling and LU Zi-Wei. Application of stratified implantation for silicon micro-strip detectors[J]. Chinese Physics C, 2015, 39(6): 066005. doi: 10.1088/1674-1137/39/6/066005
LI Hai-Xia, LI Zhan-Kui, WANG Fang-Cong, LI Rong-Hua, CHEN Cui-Hong, WANG Xiu-Hua, RONG Xin-Juan, LIU Feng-Qiong, WANG Zhu-Sheng, LI Chun-Yan, ZU Kai-Ling and LU Zi-Wei. Application of stratified implantation for silicon micro-strip detectors[J]. Chinese Physics C, 2015, 39(6): 066005.  doi: 10.1088/1674-1137/39/6/066005 shu
Milestone
Received: 2014-09-18
Revised: 1900-01-01
Article Metric

Article Views(1711)
PDF Downloads(160)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Application of stratified implantation for silicon micro-strip detectors

    Corresponding author: LI Hai-Xia,

Abstract: In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P+ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return