60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

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WANG Yan-Ping, LUO Yin-Hong, WANG Wei, ZHANG Ke-Ying, GUO Hong-Xia, GUO Xiao-Qiang and WANG Yuan-Ming. 60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices[J]. Chinese Physics C, 2013, 37(5): 056201. doi: 10.1088/1674-1137/37/5/056201
WANG Yan-Ping, LUO Yin-Hong, WANG Wei, ZHANG Ke-Ying, GUO Hong-Xia, GUO Xiao-Qiang and WANG Yuan-Ming. 60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices[J]. Chinese Physics C, 2013, 37(5): 056201.  doi: 10.1088/1674-1137/37/5/056201 shu
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Received: 2012-04-18
Revised: 1900-01-01
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60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Abstract: The testing techniques and experimental methods of the 60Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.

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