Equivalent properties of single event burnout induced by different sources

YANG Shi-Yu; CAO Zhou; DA Dao-An; XUE Yu-Xiong

doi:10.1088/1674-1137/33/5/010

Chinese Physics C> 2009, Vol. 33> Issue(5) : 369-373 DOI: 10.1088/1674-1137/33/5/010

Equivalent properties of single event burnout induced by different sources

Abstract
HTML
Reference
Related

PDF

Abstract：
The experimental results of single event burnout induced by heavy ions and ²⁵²Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by ²⁵²Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the ``turn-off'' state is more susceptible to single event burnout than it is in the ``turn-on'' state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and ²⁵²Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout.

References

[1]

. Waskiewicz A E, Groninger J W. IEEE Trans. Nucl. Sci.,1986, NS-33: 17102. John W. Adolphsen, Janet L. Barth. IEEE Trans. Nucl.Sci., 1996, 43: 29213. Stephen J H, Sanderson T K, Mapper D, Farren J. IEEETrans. Nucl. Sci., 1984, NS-31(6): 10694. Dennia L Oberg, Jerry L Wert. IEEE Trans. Nucl. Sci.,1987, NS-34: 17365. CAO Zhou, YANG Shi-Yu, DA Dao-An. Vacuum and Cryo-genics, 2004, 10(1): 21 (in Chinese)6. LI Zhi-Chang, CAO Zhou et al. Journal of Astronautics,2004, 25(4): 453 (in Chinese)7. LI Zhi-Chang, CAO Zhou et al. Atomic Energy Science and Technology, 2004, 38(5): 395 (in Chinese)

[1]	Renli Xu , Chen Wu , Jian Liu , Bin Hong , Jie Peng , Xiong Li , Ruxian Zhu , Zhizhen Zhao , Zhongzhou Ren . Ground-state properties of finite nuclei in relativistic Hartree-Bogoliubov theory with an improved quark mass density-dependent model. Chinese Physics C, 2026, 50(2): 1-12.
[2]	Lu-Qi Zhang , Yao Ma , Yong-Liang Ma . Nuclear matter properties from chiral-scale effective theory including a dilatonic scalar meson. Chinese Physics C, 2026, 50(3): 1-11.
[3]	P.S. Prusachenko , D.N. Grozdanov , N.A. Fedorov , Yu.N. Kopatch , G.V. Pampushik , P.I. Kharlamov , V.R. Skoy , I.N. Ruskov , T.Yu. Tretyakova , A.V. Andreev , C. Hramco , P.G. Filonchik , TANGRA collaboration . Measurement of the differential and total cross-sections of γ-ray emission induced by 14.1 MeV neutrons for C, Al, Si, Ca, Ti, Cr, and Fe using the tagged neutron method. Chinese Physics C, 2026, 50(3): 1-20.
[4]	Jing-Juan Qi , Zhen-Yang Wang , Zhu-Feng Zhang , Xin-Heng Guo . The properties of the S-wave D_sD_s bound state. Chinese Physics C, 2026, 50(2): 1-8. doi: 10.1088/1674-1137/ae1195
[5]	Jialin He , Xinye Peng , Zhongbao Yin , Liang Zheng . Extracting the kinetic freeze-out properties of high energy pp collisions at the LHC with event shape classifiers. Chinese Physics C, 2026, 50(1): 014108. doi: 10.1088/1674-1137/ae07ba
[6]	Jin-Yu Huo , Rui Chen . Exploring the two-body strong decay properties of the possible ${\boldsymbol\Lambda_{\boldsymbol c}\boldsymbol K^{}}$ and ${\boldsymbol\Sigma_{\boldsymbol c}\boldsymbol K^{()}}$ molecules. Chinese Physics C, 2025, 49(10): 103108. doi: 10.1088/1674-1137/adec4e
[7]	K. S. Kim , P. T. P. Hutauruk , Seung-il Nam , Chang Ho Hyun . Effect of neutrino electromagnetic properties on quasielastic neutral-current neutrino-nucleus scattering. Chinese Physics C, 2025, 49(11): 113106. doi: 10.1088/1674-1137/adf1f2
[8]	Mirjavoxir Mirkhaydarov , Mirzabek Alloqulov , Sanjar Shaymatov . Radiation properties of the accretion disk around a quantum-corrected black hole. Chinese Physics C, 2025, 49(12): 125107. doi: 10.1088/1674-1137/adfa83
[9]	. Generation of axions and axion-like particles through mass parametric resonance induced by scalar perturbations in the early universe. Chinese Physics C, 2025, 49(12): 125108. doi: 10.1088/1674-1137/adfa82
[10]	HU Xi-Duo , SHAO Ming-Zhu , LUO Shi-Yu , LIU Yong-Sheng , ZHU De-Hai . Average Field Idea and Single Particle Model for 2 Dimension Crystallization Beams(Ⅱ). Chinese Physics C, 2004, 28(2): 196-199.
[11]	WU SHI-SHU . ON NUCLEAR SINGLE-PARTICLE POTENTIALS（Ⅲ）SINGLEPARTICLE ENERGIES DETERMINED BY THE NONHERMITIAN POTENTIAL U_αβ=M_αβ（ε_β）. Chinese Physics C, 1979, 3(4): 469-483.

Access

Get Citation

YANG Shi-Yu, CAO Zhou, DA Dao-An and XUE Yu-Xiong. Equivalent properties of single event burnout induced by different sources[J]. Chinese Physics C, 2009, 33(5): 369-373. doi: 10.1088/1674-1137/33/5/010

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2008-06-12
Revised: 2008-11-03

Article Metric

Article Views(2576)
PDF Downloads(598)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Equivalent properties of single event burnout induced by different sources

Corresponding author: YANG Shi-Yu,

Received Date: 2008-06-12
Accepted Date: 2008-11-03
Available Online: 2009-05-05

Abstract:

The experimental results of single event burnout induced by heavy ions and ²⁵²Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by ²⁵²Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the ``turn-off'' state is more susceptible to single event burnout than it is in the ``turn-on'' state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and ²⁵²Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout.