In-situ monitoring of EuTiO<SUB>3</SUB> and SrTiO<SUB>3</SUB> film growth using time-resolved X-ray scattering during pulsed-laser deposition

WANG Huan-Hua

doi:10.1088/1674-1137/33/11/002

Chinese Physics C> 2009, Vol. 33> Issue(11) : 935-943 DOI: 10.1088/1674-1137/33/11/002

In-situ monitoring of EuTiO₃ and SrTiO₃ film growth using time-resolved X-ray scattering during pulsed-laser deposition

WANG Huan-Hua ^,

(Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China)

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Abstract：
Time-resolved X-ray scattering was employed to in-situ monitor the epitaxial growth process of the thin films and multilayers of EuTiO₃ and SrTiO₃ during pulsed laser deposition. The temporal intensity oscillations of the reflected X-rays at anti-Bragg position and the transient processes following the flux pulses were observed. The temporal intensity oscillations were used to control the film thickness, and the reflectivity along the crystal truncation rod was used to measure both the film thickness and the surface/interface roughness. The primary features of the X-ray intensity oscillations were reproduced via simulating the experimental data using diffusive rate equation model. Several mechanisms of determining the X-ray intensity features were discerned.

References

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WANG Huan-Hua. In-situ monitoring of EuTiO₃ and SrTiO₃ film growth using time-resolved X-ray scattering during pulsed-laser deposition[J]. Chinese Physics C, 2009, 33(11): 935-943. doi: 10.1088/1674-1137/33/11/002

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Received: 2008-12-17
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

In-situ monitoring of EuTiO₃ and SrTiO₃ film growth using time-resolved X-ray scattering during pulsed-laser deposition

Corresponding author: WANG Huan-Hua,

(Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China)

Received Date: 2008-12-17

Accepted Date: 2009-03-31

Available Online: 2009-11-05

Abstract:

Time-resolved X-ray scattering was employed to in-situ monitor the epitaxial growth process of the thin films and multilayers of EuTiO₃ and SrTiO₃ during pulsed laser deposition. The temporal intensity oscillations of the reflected X-rays at anti-Bragg position and the transient processes following the flux pulses were observed. The temporal intensity oscillations were used to control the film thickness, and the reflectivity along the crystal truncation rod was used to measure both the film thickness and the surface/interface roughness. The primary features of the X-ray intensity oscillations were reproduced via simulating the experimental data using diffusive rate equation model. Several mechanisms of determining the X-ray intensity features were discerned.

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In-situ monitoring of EuTiO₃ and SrTiO₃ film growth using time-resolved X-ray scattering during pulsed-laser deposition

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In-situ monitoring of EuTiO₃ and SrTiO₃ film growth using time-resolved X-ray scattering during pulsed-laser deposition

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In-situ monitoring of EuTiO3 and SrTiO3 film growth using time-resolved X-ray scattering during pulsed-laser deposition

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In-situ monitoring of EuTiO3 and SrTiO3 film growth using time-resolved X-ray scattering during pulsed-laser deposition

Corresponding author: WANG Huan-Hua,

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In-situ monitoring of EuTiO₃ and SrTiO₃ film growth using time-resolved X-ray scattering during pulsed-laser deposition

In-situ monitoring of EuTiO₃ and SrTiO₃ film growth using time-resolved X-ray scattering during pulsed-laser deposition