Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

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YU Wen-Jie, ZHANG Zheng-Xuan, HE Wei, TIAN Hao, CHEN Ming, WANG Ru, BI Da-Wei, ZHANG Shuai and WANG Xi. Investigation on a solution to improve the irradiation reliability of SOI NMOSFET[J]. Chinese Physics C, 2008, 32(12): 989-991. doi: 10.1088/1674-1137/32/12/009
YU Wen-Jie, ZHANG Zheng-Xuan, HE Wei, TIAN Hao, CHEN Ming, WANG Ru, BI Da-Wei, ZHANG Shuai and WANG Xi. Investigation on a solution to improve the irradiation reliability of SOI NMOSFET[J]. Chinese Physics C, 2008, 32(12): 989-991.  doi: 10.1088/1674-1137/32/12/009 shu
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Received: 2008-04-01
Revised: 2008-05-29
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Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

    Corresponding author: YU Wen-Jie,

Abstract: 

A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.

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