Thermal experiment of silicon PIN detector

CHEN Hong-Fei; ZOU Ji-Qing; SHI Wei-Hong; ZOU Hong; HU Ran-Sheng; TIAN Da-Yu

doi:10.1088/1674-1137/32/10/011

Chinese Physics C> 2008, Vol. 32> Issue(10) : 820-824 DOI: 10.1088/1674-1137/32/10/011

Thermal experiment of silicon PIN detector

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Abstract：
The experiment of this paper is the thermal test of the leakage current of silicon PIN detector. Raising temperature may cause the detector to increase leakage current, decrease depletion and increase noise. Three samples are used in the experiment. One (called ΔE) is the sample of 100 μm in thickness. The other two (called E₁ and E₂) are stacks of five detectors of 1000 μm in thickness. All of them are 12 mm in diameter. The experiment has been done for 21 hours and with power on continuously. The samples have undergone more than 60℃ for about one hour. They are not degenerated when back to the room temperature. The depletion rate is temperature and bias voltage related. With the circuit of the experiment and temperature at 35℃, ΔE is still depleted while E₁ and E₂ are 94.9% and 99.7% depleted respectively. The noises of the samples can be derived from the values at room temperature and the thermal dependence of the leakage currents. With the addition of the noise of the pre-amplifier, the noises of E₁, E₂ and ΔE at 24℃ are 16.4, 16.3, and 10.5 keV (FWHM) respectively while at 35℃ are about 33.6, 33.1, and 20.6 keV (FWHM) respectively.

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CHEN Hong-Fei, ZOU Ji-Qing, SHI Wei-Hong, ZOU Hong, HU Ran-Sheng and TIAN Da-Yu. Thermal experiment of silicon PIN detector[J]. Chinese Physics C, 2008, 32(10): 820-824. doi: 10.1088/1674-1137/32/10/011

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Received: 2007-12-10
Revised: 2008-03-25

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沈阳化工大学材料科学与工程学院沈阳 110142

Thermal experiment of silicon PIN detector

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Thermal experiment of silicon PIN detector

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