Strain relaxation and magnetoresistance of La0.7Ca0.3MnO3 film deposited on MgO substrate

TAN Wei-Shi; CAI Hong-Ling; LIU Jin-Sheng; WU Xiao-Shan; JIANG Shu-Shen; JIA Quan-Jie

Chinese Physics C> 2005, Vol. 29> Issue(S1) : 20-23

Strain relaxation and magnetoresistance of La_0.7Ca_0.3MnO₃ film deposited on MgO substrate

Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China2 National Key Laboratory of Solid State Microstructures, Department of Physics, Nanjing University,Nanjing 210093, China3 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

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Abstract：
La_0.7Ca_0.3MnO₃(LCMO) thin films with the thickness ranging from 5 nm to 200 nm were deposited on (001)-oriented single crystal MgO substrate by 90° off-axis radio frequency magnetron sputtering. Grazing incidence X-ray diffraction technique, combined with normal X-ray diffraction, was applied to study the lattice strain and strain relaxation in LCMO films. The magnetoresistance of films were measured by means of standard four-probe technique. The results indicated that the microstrain of LCMO/MgO film began to relax when the film thickness is less than 5 nm. The LCMO film is fully strain-relaxed with thickness larger than 100 nm and exhibit LCMO bulk-like magnetoresistance properties, i.e. with relatively lager magnetoresistance ratio and higher peak temperature of magnetoresistance.

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TAN Wei-Shi, CAI Hong-Ling, LIU Jin-Sheng, WU Xiao-Shan, JIANG Shu-Shen and JIA Quan-Jie. Strain relaxation and magnetoresistance of La_0.7Ca_0.3MnO₃ film deposited on MgO substrate[J]. Chinese Physics C, 2005, 29(S1): 20-23.

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Received: 2005-10-28
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Strain relaxation and magnetoresistance of La_0.7Ca_0.3MnO₃ film deposited on MgO substrate

Corresponding author: TAN Wei-Shi,

Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China2 National Key Laboratory of Solid State Microstructures, Department of Physics, Nanjing University,Nanjing 210093, China3 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2005-10-28

Accepted Date: 1900-01-01

Available Online: 2005-01-02

Abstract: La_0.7Ca_0.3MnO₃(LCMO) thin films with the thickness ranging from 5 nm to 200 nm were deposited on (001)-oriented single crystal MgO substrate by 90° off-axis radio frequency magnetron sputtering. Grazing incidence X-ray diffraction technique, combined with normal X-ray diffraction, was applied to study the lattice strain and strain relaxation in LCMO films. The magnetoresistance of films were measured by means of standard four-probe technique. The results indicated that the microstrain of LCMO/MgO film began to relax when the film thickness is less than 5 nm. The LCMO film is fully strain-relaxed with thickness larger than 100 nm and exhibit LCMO bulk-like magnetoresistance properties, i.e. with relatively lager magnetoresistance ratio and higher peak temperature of magnetoresistance.

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Strain relaxation and magnetoresistance of La_0.7Ca_0.3MnO₃ film deposited on MgO substrate

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Strain relaxation and magnetoresistance of La_0.7Ca_0.3MnO₃ film deposited on MgO substrate

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