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Chinese Physics C> 2005, Vol. 29> Issue(S1) : 20-23 

Strain relaxation and magnetoresistance of La0.7Ca0.3MnO3 film deposited on MgO substrate

  •  Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China2 National Key Laboratory of Solid State Microstructures, Department of Physics, Nanjing University,Nanjing 210093, China3 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

  • La0.7Ca0.3MnO3(LCMO) thin films with the thickness ranging from 5 nm to 200 nm were deposited on (001)-oriented single crystal MgO substrate by 90° off-axis radio frequency magnetron sputtering. Grazing incidence X-ray diffraction technique, combined with normal X-ray diffraction, was applied to study the lattice strain and strain relaxation in LCMO films. The magnetoresistance of films were measured by means of standard four-probe technique. The results indicated that the microstrain of LCMO/MgO film began to relax when the film thickness is less than 5 nm. The LCMO film is fully strain-relaxed with thickness larger than 100 nm and exhibit LCMO bulk-like magnetoresistance properties, i.e. with relatively lager magnetoresistance ratio and higher peak temperature of magnetoresistance.
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    [1] . Edwards D M. Adv. Phys., 2002, 51(5): 1259-3182. Van Tendeloo G, Lebedev O I, Hervieu M et al. Rep. Prog.Phys., 2004, 67(8): 1315-3653. Vengalis B, Maneikis A, Anisimovas F et al. J. Magn.Magn.Mater., 2000, 211(1-3): 35-04. Prellier W, Lecoeur P, Mercey B. J. Phys.: Condens. Matter,2001, 13(48): R915-9445. ZHANG J, Tanaka H, Kanki T et al. Phys. Rev., 2001,B64(18): 184404-1-84404-76. GAO J, H╝user B, Rogalla H. J. Appl. Phys., 1990, 67(5):2512-5157. Chechersky V, Nath A, Isaac I et al. Phys. Rev., 1999,B60(5): 3005-0088. Goldman A M, Vas'o V, Kraus P et al. J. Magn. Magn.Mater., 1999, 200(1-3): 69-29. TAN W S, YANG L, WU X S et al. Physica, 2003,C384(4): 437-4210. JIANG Xiao-Ming, JIA Quan-Jie, ZHENG Wen-Li et al.High Energy Phys and Nucl. Phys., 2000, 24(12): 1185-1190(in Chinese)(姜晓明，贾全杰，郑文莉等.高能物理与核物理，2000, 24(12):1185-1190)11. TAN Wei-Shi, CAI Hong-Ling, WU Xiao-Shan et al. NuclearTechnique, 2004, 27(12): 914-918(in Chinese)(谭伟石，蔡宏灵，吴小山等.核技术，2004, 27(12): 914-918)12. Matthews J W, Blakeslee A E. J. Cryst. Growth, 1974,27(DEC): 118-2513. Gommert E, Cerva H, Wecker J et al. J. Appl. Phy., 1999,85(8): 5417-419

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TAN Wei-Shi, CAI Hong-Ling, LIU Jin-Sheng, WU Xiao-Shan, JIANG Shu-Shen and JIA Quan-Jie. Strain relaxation and magnetoresistance of La0.7Ca0.3MnO3 film deposited on MgO substrate[J]. Chinese Physics C, 2005, 29(S1): 20-23.
TAN Wei-Shi, CAI Hong-Ling, LIU Jin-Sheng, WU Xiao-Shan, JIANG Shu-Shen and JIA Quan-Jie. Strain relaxation and magnetoresistance of La0.7Ca0.3MnO3 film deposited on MgO substrate[J]. Chinese Physics C, 2005, 29(S1): 20-23. shu
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Received: 2005-10-28
Revised: 1900-01-01
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Strain relaxation and magnetoresistance of La0.7Ca0.3MnO3 film deposited on MgO substrate

    Corresponding author: TAN Wei-Shi,
  • Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, China2 National Key Laboratory of Solid State Microstructures, Department of Physics, Nanjing University,Nanjing 210093, China3 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
  • Received Date: 2005-10-28
  • Accepted Date: 1900-01-01
  • Available Online: 2005-01-02

Abstract: La0.7Ca0.3MnO3(LCMO) thin films with the thickness ranging from 5 nm to 200 nm were deposited on (001)-oriented single crystal MgO substrate by 90° off-axis radio frequency magnetron sputtering. Grazing incidence X-ray diffraction technique, combined with normal X-ray diffraction, was applied to study the lattice strain and strain relaxation in LCMO films. The magnetoresistance of films were measured by means of standard four-probe technique. The results indicated that the microstrain of LCMO/MgO film began to relax when the film thickness is less than 5 nm. The LCMO film is fully strain-relaxed with thickness larger than 100 nm and exhibit LCMO bulk-like magnetoresistance properties, i.e. with relatively lager magnetoresistance ratio and higher peak temperature of magnetoresistance.

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