Microstructures of Ge/Si Superlattices Growtn at Low Temperature

  • Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.
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  • [1] Thanh V Le, Yam V, Boueaud P et al. Phys. Rev., 1995, B60:58512 Schmidt O G, Kienzle O, Hao Y et al. Appl. Phys. Lett., 1999, 74:12723 Mateeva E, Sutter P, Lagally M G. Appl. Phys. Lett., 1999, 74:567 4 Schittenhelm P, Gail M, Brurmer Jet al. Growth, 1995, 157:2605 Sunamura H, Fukatsu S, Usami N et al. Growth, 1995, 157:265 6 LIU F, WU F, Lagally M G. Chem. Rev., 1997, 97:1045 7 CHENG H H, Chia C T, Markov V A. Thin Solid Films, 2000, 369:1828 Soo Y L, Kioseoglou G, Huang S. Appl. Phys. Lett., 2001, 78:3684 9 ZHENG Wen–Li, JIA Quan–Jie, JIANG Xiao–Ming et al. High Energy Phys. and Nucl. Phys., 2001, 25(12) : 1231–1237(in Chinese)(郑文莉等.高能物理与核物理,2001,25(12) :1231–1237) 10 WU X S, BIE Q S, LIN Z S et sl. Mod. Phys. Lett., B 1999, 13:325
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WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743.
WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743. shu
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Received: 2002-11-22
Revised: 1900-01-01
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Microstructures of Ge/Si Superlattices Growtn at Low Temperature

    Corresponding author: WU Xiao-Shan,
  • Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

Abstract: Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.

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