Temperature Effects of CsI(Tl) Crystal Detector with APD Readout

CHEN Ruo-Fu; FAN Rui-Rui; XU Hu-Shan; ZHAN Wen-Long; LI Song-Lin; XIAO Zhi-Gang; XIAO Guo-Qing; HU Zheng-Guo; HUANG Tian-Heng; ZHANG Xue-Heng; ZHENG Chuan; FU Fen

Chinese Physics C> 2007, Vol. 31> Issue(8) : 760-763

Temperature Effects of CsI(Tl) Crystal Detector with APD Readout

Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

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Abstract：
The temperature dependences of the light output of CsI(Tl) crystal grown at IMP and of the gain of the Hamamatsu S8664-1010 avalanche photodiode (APD) have been investigated systematically. The light output of the CsI(Tl) crystal increases with temperature by 0.67%/℃ in the region from －2℃ to 8℃, and by 0.33%/℃ in the region from 8℃ to 25℃, while the gain of the tested APD decreases by －3.68%/℃ (working voltage 400V) on average in the room temperature range. The best energy resolution 5.1% of the CsI(Tl) with APD was obtained for the 662keV γ ray from ¹³⁷Cs radiation source.

References

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CHEN Ruo-Fu, FAN Rui-Rui, XU Hu-Shan, ZHAN Wen-Long, LI Song-Lin, XIAO Zhi-Gang, XIAO Guo-Qing, HU Zheng-Guo, HUANG Tian-Heng, ZHANG Xue-Heng, ZHENG Chuan, FU Fen, Temperature Effects of CsI(Tl) Crystal Detector with APD Readout[J]. Chinese Physics C, 2007, 31(8): 760-763.

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Received: 2006-11-23
Revised: 2006-12-15

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