Bias Dependence of Total Dose Effect of Partially Depleted SOI MOSFET

YU Wen-Jie; WANG Ru; ZHANG Zheng-Xuan; QIAN Cong; HE Wei; TIAN Hao; CHEN Ming

Chinese Physics C> 2007, Vol. 31> Issue(9) : 819-822

Bias Dependence of Total Dose Effect of Partially Depleted SOI MOSFET

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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Abstract：
Experiments show that total dose radiation effect in buried oxide of SOI (Silicon on Insulator) MOS is obviously dependent on bias condition. Trapped charge buildup during irradiation in buried oxide, which dominantly induces back channel leakage, is investigated. A numerical model, including process of carrier recombination and trapping, is developed to simulate the trapped charge buildup in buried oxide under different bias conditions. The simulation results, agreed with the experiment results, show the mechanism of bias dependence of total dose radiation effect.

References

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YU Wen-Jie, WANG Ru, ZHANG Zheng-Xuan, QIAN Cong, HE Wei, TIAN Hao and CHEN Ming. Bias Dependence of Total Dose Effect of Partially Depleted SOI MOSFET[J]. Chinese Physics C, 2007, 31(9): 819-822.

YU Wen-Jie, WANG Ru, ZHANG Zheng-Xuan, QIAN Cong, HE Wei, TIAN Hao and CHEN Ming. Bias Dependence of Total Dose Effect of Partially Depleted SOI MOSFET[J]. Chinese Physics C, 2007, 31(9): 819-822. shu

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Received: 2006-11-25
Revised: 2007-01-03

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沈阳化工大学材料科学与工程学院沈阳 110142

Bias Dependence of Total Dose Effect of Partially Depleted SOI MOSFET

Corresponding author: YU Wen-Jie,

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received Date: 2006-11-25
Accepted Date: 2007-01-03
Available Online: 2007-09-05

Abstract: Experiments show that total dose radiation effect in buried oxide of SOI (Silicon on Insulator) MOS is obviously dependent on bias condition. Trapped charge buildup during irradiation in buried oxide, which dominantly induces back channel leakage, is investigated. A numerical model, including process of carrier recombination and trapping, is developed to simulate the trapped charge buildup in buried oxide under different bias conditions. The simulation results, agreed with the experiment results, show the mechanism of bias dependence of total dose radiation effect.