Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

LUO Yin-Hong; GONG Jian-Cheng; ZHANG Feng-Qi; GUO Hong-Xia; YAO Zhi-Bin; LI Yong-Hong; GUO Ning

Chinese Physics C> 2006, Vol. 30> Issue(1) : 79-83

Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

Northwestern Institute of Nuclear Technology,Xi'an 710024,China

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Abstract：
The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰaccelerator, and by ⁶⁰Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future.

References

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LUO Yin-Hong, GONG Jian-Cheng, ZHANG Feng-Qi, GUO Hong-Xia, YAO Zhi-Bin, LI Yong-Hong and GUO Ning. Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment[J]. Chinese Physics C, 2006, 30(1): 79-83.

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Received: 2005-04-09
Revised: 2005-05-27

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

Corresponding author: LUO Yin-Hong,

Northwestern Institute of Nuclear Technology,Xi'an 710024,China

Received Date: 2005-04-09

Accepted Date: 2005-05-27

Available Online: 2006-01-05

Abstract: The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰaccelerator, and by ⁶⁰Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future.

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Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

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