X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate

Get Citation
XIE Cheng-Qing, CHEN Da-Peng, LI Bing, WANG De-Qiang, YE Tian-Chun, PENG Liang-Qiang, YI Fu-Ting, HAN Yong and ZHANG Ju-Fang. X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate[J]. Chinese Physics C, 2003, 27(S1): 118-121.
XIE Cheng-Qing, CHEN Da-Peng, LI Bing, WANG De-Qiang, YE Tian-Chun, PENG Liang-Qiang, YI Fu-Ting, HAN Yong and ZHANG Ju-Fang. X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate[J]. Chinese Physics C, 2003, 27(S1): 118-121. shu
Milestone
Received: 2003-11-21
Revised: 1900-01-01
Article Metric

Article Views(2619)
PDF Downloads(527)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

X-ray Lithography Technology for the Fabrication of Deep-submicron T-shaped Gate

    Corresponding author: XIE Cheng-Qing,
  • Microelectronics R&D Center,CAS,Beijing 100029,China2 Synchrotron Radiation Laboratory,Institute of High Energy Physics,CAS,Beijing 100039,China

Abstract: Because of its validity in reducing transistor noise due to gate parasitic resistance,T-shaped structure has been applied for the fabrication of Pseudomorphic High Electron Mobility Transistor (PHEMT) device widely,X-ray lithography is the best way to fabricate deep-submicron T-shaped structure,because it has many adantages,such as large process latitude、high throughput,extremely long depth of focus、large exposure field sizes,low cost,and so on,and the more important thing is that X-ray lithography technology is relatively mature.In this paper,the home-made X-ray mask process is introduced first,and the influence of blur to the light intensity distribution on the surface of X-ray resist is analyzed,the three layer resist method which is used for the fabrication of deep-submicron T-shaped structure and the 75nm T-shaped structure result which was achieved in BSRF 3B1A beamline are presented lastly.

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return