×
近期发现有不法分子冒充我刊与作者联系,借此进行欺诈等不法行为,请广大作者加以鉴别,如遇诈骗行为,请第一时间与我刊编辑部联系确认(《中国物理C》(英文)编辑部电话:010-88235947,010-88236950),并作报警处理。
本刊再次郑重声明:
(1)本刊官方网址为cpc.ihep.ac.cn和https://iopscience.iop.org/journal/1674-1137
(2)本刊采编系统作者中心是投稿的唯一路径,该系统为ScholarOne远程稿件采编系统,仅在本刊投稿网网址(https://mc03.manuscriptcentral.com/cpc)设有登录入口。本刊不接受其他方式的投稿,如打印稿投稿、E-mail信箱投稿等,若以此种方式接收投稿均为假冒。
(3)所有投稿均需经过严格的同行评议、编辑加工后方可发表,本刊不存在所谓的“编辑部内部征稿”。如果有人以“编辑部内部人员”名义帮助作者发稿,并收取发表费用,均为假冒。
                  
《中国物理C》(英文)编辑部
2024年10月30日

Experiment on Hard X-rays Damage Effects for Memory

Get Citation
GUO Hong-Xia, HAN Fu-Bin, CHEN Yu-Sheng, LUO Jian-Hui, GONG Jian-Cheng, XIE Ya-Ning, HUANG Yu-Ying, HE Wei and HU Tian-Dou. Experiment on Hard X-rays Damage Effects for Memory[J]. Chinese Physics C, 2003, 27(S1): 5-9.
GUO Hong-Xia, HAN Fu-Bin, CHEN Yu-Sheng, LUO Jian-Hui, GONG Jian-Cheng, XIE Ya-Ning, HUANG Yu-Ying, HE Wei and HU Tian-Dou. Experiment on Hard X-rays Damage Effects for Memory[J]. Chinese Physics C, 2003, 27(S1): 5-9. shu
Milestone
Received: 2003-11-21
Revised: 1900-01-01
Article Metric

Article Views(4528)
PDF Downloads(692)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Experiment on Hard X-rays Damage Effects for Memory

    Corresponding author: HAN Fu-Bin,
  • Northwest Institute of Nuclear Technology,Xi'an 710024,China2 Institute of High Energy Physics,CAS,Beijing 100039,China

Abstract: Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration from 16k to 4M irradiated by 20—100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source γ-rays.The ratio of radiation damage to the them irradiated with two sources are measured.The relationship of radiation hardness of SRAM versus different integration for γ-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return