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Chinese Physics C> 2003, Vol. 27> Issue(S1) : 5-9 

Experiment on Hard X-rays Damage Effects for Memory

  •  Northwest Institute of Nuclear Technology,Xi'an 710024,China2 Institute of High Energy Physics,CAS,Beijing 100039,China

  • Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration from 16k to 4M irradiated by 20—100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source γ-rays.The ratio of radiation damage to the them irradiated with two sources are measured.The relationship of radiation hardness of SRAM versus different integration for γ-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.

  • References

    [1] Chadsey W I.X-Ray Dose Enhancement Vol. I:Summary Report,RADC -TR-76-159，ADAC262482 LAI Z. W .Radiation Hardening Electronics-Radiation Effects and Hardening Techniques, Beijing:National Defense Industry Press,1998(in Chinese)(赖祖武.抗辐射电子学一辐射效应及加固原理.北京:国防工业出版社，1998)3 Experimental Method of Atomic Nuclear Physics(in Chinese)(复旦大学，清华大学，北京大学，原子核物理实验方法，原子能出版社，1996)4 GUO H X, CHEN Y S, ZH}1NG Y M et al. Acta Physica Sinica，2001，50(8):1545一1548(in Chinese)(郭红霞，陈雨生，张义门等.物理学报，2001 , 50 ( 8 ) , 1545-1548)5 GUO H X，CHEN Y S, ZHANG Y M et al. Acta Physica Sinica.，2001，50(12):2279-2283(in Chinese)(郭红霞，陈雨生，张义门等.物理学报，2001 , 50 ( 12 ) , 2279-2283)6 GUO H X，CHEN Y S, ZHANG Y M et al. Acta Physica Sinica, 2002, 51(10)，;2315-2319(in Chinese)(郭红霞，陈雨生，张义门等.物理学报，2002, 51 (10 ) ; 2315-2319)7 Beutle D E. IEEE Trans. Nuc. Sci.，1990,37(6);1541-15468 XIE Y N，LUO J,TAO Y et al. HEPNP,2001,25(Supp.):7-11(in Chinese)(谢亚宁，骆军，陶冶等.高能物理与核物理，2001，25(增刊);7-11)9 GUO H X, CHEN Y S, ZHANG Y M et al. HEPNP,2001,25(Supp.):I-6(in Chinese)(郭红霞，陈雨生，张义门等.高能物理与核物理,2001,25(增刊):1-6)10 HE C H .Nuclear Electronics and Detection Technology, 2000，20;115-120(in Chinese)(贺朝会.核电子学与探测技术，2000,20;115-120)11 Wrobel T F. IEEE Trans. Nuc. Sci.，1989,36(6);2241-2247

  • References

    [1] Chadsey W I.X-Ray Dose Enhancement Vol. I:Summary Report,RADC -TR-76-159，ADAC262482 LAI Z. W .Radiation Hardening Electronics-Radiation Effects and Hardening Techniques, Beijing:National Defense Industry Press,1998(in Chinese)(赖祖武.抗辐射电子学一辐射效应及加固原理.北京:国防工业出版社，1998)3 Experimental Method of Atomic Nuclear Physics(in Chinese)(复旦大学，清华大学，北京大学，原子核物理实验方法，原子能出版社，1996)4 GUO H X, CHEN Y S, ZH}1NG Y M et al. Acta Physica Sinica，2001，50(8):1545一1548(in Chinese)(郭红霞，陈雨生，张义门等.物理学报，2001 , 50 ( 8 ) , 1545-1548)5 GUO H X，CHEN Y S, ZHANG Y M et al. Acta Physica Sinica.，2001，50(12):2279-2283(in Chinese)(郭红霞，陈雨生，张义门等.物理学报，2001 , 50 ( 12 ) , 2279-2283)6 GUO H X，CHEN Y S, ZHANG Y M et al. Acta Physica Sinica, 2002, 51(10)，;2315-2319(in Chinese)(郭红霞，陈雨生，张义门等.物理学报，2002, 51 (10 ) ; 2315-2319)7 Beutle D E. IEEE Trans. Nuc. Sci.，1990,37(6);1541-15468 XIE Y N，LUO J,TAO Y et al. HEPNP,2001,25(Supp.):7-11(in Chinese)(谢亚宁，骆军，陶冶等.高能物理与核物理，2001，25(增刊);7-11)9 GUO H X, CHEN Y S, ZHANG Y M et al. HEPNP,2001,25(Supp.):I-6(in Chinese)(郭红霞，陈雨生，张义门等.高能物理与核物理,2001,25(增刊):1-6)10 HE C H .Nuclear Electronics and Detection Technology, 2000，20;115-120(in Chinese)(贺朝会.核电子学与探测技术，2000,20;115-120)11 Wrobel T F. IEEE Trans. Nuc. Sci.，1989,36(6);2241-2247

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GUO Hong-Xia, HAN Fu-Bin, CHEN Yu-Sheng, LUO Jian-Hui, GONG Jian-Cheng, XIE Ya-Ning, HUANG Yu-Ying, HE Wei and HU Tian-Dou. Experiment on Hard X-rays Damage Effects for Memory[J]. Chinese Physics C, 2003, 27(S1): 5-9.
GUO Hong-Xia, HAN Fu-Bin, CHEN Yu-Sheng, LUO Jian-Hui, GONG Jian-Cheng, XIE Ya-Ning, HUANG Yu-Ying, HE Wei and HU Tian-Dou. Experiment on Hard X-rays Damage Effects for Memory[J]. Chinese Physics C, 2003, 27(S1): 5-9. shu
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Received: 2003-11-21
Revised: 1900-01-01
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Experiment on Hard X-rays Damage Effects for Memory

    Corresponding author: HAN Fu-Bin,
  • Northwest Institute of Nuclear Technology,Xi'an 710024,China2 Institute of High Energy Physics,CAS,Beijing 100039,China
  • Received Date: 2003-11-21
  • Accepted Date: 1900-01-01
  • Available Online: 2003-01-02

Abstract: Experimental results of X-rays dose enhancement effects are given for floating ROM and SRAM with different integration from 16k to 4M irradiated by 20—100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source γ-rays.The ratio of radiation damage to the them irradiated with two sources are measured.The relationship of radiation hardness of SRAM versus different integration for γ-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.

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