Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

LI Cheng; CHEN HongFang; WU Chong; ZHANG YongMing; XU ZiZong; LE Yi; SHAO ChuanFen; SHI ChangXin

Chinese Physics C> 2000, Vol. 24> Issue(5) : 431-438

Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

Department of Modern Physics, University of Science and Technology of China, Hefei 230027, China2 Institute of Microelectronic Technology, Shanghai Jiaotong University, Shanghai 200030, China

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Abstract：
Radiation hardness of a particle detector, double metal contact GaAs semiconductors has been investigated in 14 MeV neutron exposure. The leak current, the charge collection efficiency and the spectrum of MIPs are measured after 10¹²n/cm² dose. The results are compared with ⁶⁰Co 1.25MeV γ photons radiation. The mechanism of radiation damage and the effect on time performances of GaAs detectors are discussed. A hypothesis of the active layer distribution of the GaAs detectors based on experiment data is given. The computation agrees with test results.

References

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ATLAS Collabration. ATLAS Technical Proposal,1994, CERN/LHCC:71-73[2] D'Auria S, Bates R, Da Via C et al. Nucl. Instr and Meth.,1997, A386:177-185[3] Rogalla M, Bsttke M, Dude N et al. Nucl. Instr and Meth.,1998, A410:41-45[4] 比Yi, LI Cheng, CFZEN HongFang et al. High Energy Phys. and Nucl. Phys. (in Chinese), 1998, 22(12):1092-1099(乐毅，李澄，陈宏芳等.高能物理与核物理，1998, 22(12):1092-1099)[5] Ragalla M. Eich Th et al. Nucl. lnstr and Meth,1997, A395:45-53[6] Nava F, Alietti M et al. IEEE "I"runs. (ht Nucl.,Sci.,199b, 143(3):1130-1136[7] Chen J W, Fmmmichen T, Ludwing J et al. NIM,1995, A365:273-284[8] LE Yi. Master The9is: Study on the Performances of MSM Structure C:aAs Detectors(in University of Science and Technology of China),1998 (乐毅.MSM结构的砷化稼探侧器的性能研究,中国科技大学硕士论文.1998)

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LI Cheng, CHEN HongFang, WU Chong, ZHANG YongMing, XU ZiZong, LE Yi, SHAO ChuanFen and SHI ChangXin. Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors[J]. Chinese Physics C, 2000, 24(5): 431-438.

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Received: 1999-02-24
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

Corresponding author: LI Cheng,

Department of Modern Physics, University of Science and Technology of China, Hefei 230027, China2 Institute of Microelectronic Technology, Shanghai Jiaotong University, Shanghai 200030, China

Received Date: 1999-02-24
Accepted Date: 1900-01-01
Available Online: 2000-04-05

Abstract: Radiation hardness of a particle detector, double metal contact GaAs semiconductors has been investigated in 14 MeV neutron exposure. The leak current, the charge collection efficiency and the spectrum of MIPs are measured after 10¹²n/cm² dose. The results are compared with ⁶⁰Co 1.25MeV γ photons radiation. The mechanism of radiation damage and the effect on time performances of GaAs detectors are discussed. A hypothesis of the active layer distribution of the GaAs detectors based on experiment data is given. The computation agrees with test results.