Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon

LIU Chang-Long; LU Yi-Ying; YIN LI

Chinese Physics C> 2005, Vol. 29> Issue(11) : 1107-1111

Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology,Institute of Advanced Materials Physics Faculty of Sciences,Tianjin 300072,China

Abstract
HTML
Reference
Related

PDF

Abstract：
The effects of additional vacancy-like defects on thermal diffusion of B atoms in silicon were investigated by using secondary ion mass spectroscopy. B atoms were introduced into silicon by 30keV B ion implantation at a dose of 2×10¹⁴cm^－2, while the additional vacancy-like defects were produced by two different ways. One was via 40 or 160keV He ion implantation at a dose of 5×10¹⁶cm－2 and followed by an annealing at 800°C for 1h, which produced a well-defined cavity band near the projected range of He ions. The other was via 0.5MeV F or O ion implantation at a dose of 5×10¹⁵cm^－2,which creates excess vacancy-like defects around the 1/2 projected range of F or O ions. Our results clearly show that the additional vacancy-like defects could suppress the boron diffusion during subsequent thermal annealing at 800°C for 30 min. The suppressing effects were found to depend on both the ion type and ion energy. The results were qualitatively discussed in combination with the results obtained by using transmission electron microscopy and Rutherford backscattering spectroscopy.

References

[1]

. HofkerWK,Werner HW, Obsthoek D P et al. Appl. Phys.,1974, J4: 125—1342. Claverie A, Giles L F, Omri F et al. Nucl. Instrum. Meth-ods, 1999, B147: 1—123. Collart E J H, Weemers K, Cowern N E B et al. Nucl.Instrum. Methods, 1998, B139: 98—1074. Stolk P A, Gossmann H J, Eaglesham D J et al. Appl.Phys., 1997, J81: 6031—60505. Jone K S, Zhang L H, Krishnamoorthy V et al. Appl. Phys.Lett., 1996, 68: 2672—26746. LIU C L, Sealy B J, Nejim A et al. High Energy Physicsand Nuclear Physics, 2001, 25: 1238—1244(in Chinese)(刘昌龙，Sealy B J, Nejim A等.高能物理与核物理，2001，25:1238-1244)7. Current M I, Inoue M, Nakashimma S et al. Nucl. Instrum.Methods, 1993, B74: 175—1808. Beanland D G. Solid-State Electronics, 1978, 21: 537—5429. LIU C L. Nucl. Phys. Rev., 2001, 18: 164—168(in Chinese)(刘昌龙.原子核物理评论，2001, 18: 164-168)10. Cowern N E B, Alquier D, Omri M et al. Nucl. Instrum.Methods, 1999, B148: 257—26111. Griffioen C C, Evans J H, de Jong P C et al. Nucl. Instrum.Methods, 1987, B27: 417—42112. Raneri V, Saggio M, Rimini E. J. Mater. Res., 2000, 15:1449—147713. Mayers S M, Petersen G A, Seager C H. J. Appl. Phys.,1996, 80: 9717—972114. Williams J S, Ridgway M C, Conway M J et al. Nucl. In-strum. Methods, 2001, B178: 33—4015. Ziegler J P, Biersack J P, Littmark U. The Stopping andRange of Ions in Solids. New York: Pergamon, 198516. Cerofolini G F, Corni F, Frabboni S et al. Mater. Sci. Eng., 2000, 27: 1—5217. Liu C L, Alquier D, Cayrel F et al. Solid State Phenomena,2004, 95-96: 337—34218. Raneri V, Camoisano S U. Appl. Phys. Lett., 1996, 69:1783—178519. Nielsen B, Holland O W, Leung T C et al. J. Appl. Phys.,1993, 74: 1636—163920. Simpson P J, Vos M, Mitchell I V et al. Phys. Rev., 1991,B44: 12180—12187

[1]	SHENG Li-Na , SONG Ming-Tao , LIU Jie . Vacuum Window of Intermediate Energy Heavy-Ion Microbeam Irradiation Facility. Chinese Physics C, 2008, 32(S1): 74-76.
[2]	SONG Ming-Tao , SHENG Li-Na , WANG Zhi-Guang , HE Yuan , GAO Da-Qing , YANG Xiao-Tian , LIU Jie , SU Hong , MAN Kai-Di . Development of an Intermediate Energy Heavy-Ion Micro-Beam Irradiation System. Chinese Physics C, 2008, 32(S1): 259-261.
[3]	LUO Wen-Yun , WANG Chao-Zhuang , HE Xin-Fu , FAN Sheng , HUANG Xiao-Long , WANG Chuan-Shan . Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs. Chinese Physics C, 2006, 30(11): 1088-1090.
[4]	LIU Chang-Long . Effects of Hydrogen Plasma Treatment on Cavity Formation in Silicon Induced by He Ion Implantation. Chinese Physics C, 2005, 29(5): 524-529.
[5]	JIN Yun-Fan , WANG Zhi-Guang . Ion Velocity Effect in the Process of the Damage Creation in Solid Materials Induced by Swift Heavy Ion Irradiations. Chinese Physics C, 2005, 29(11): 1115-1120.
[6]	WU Xiao-Shan , CAI Hong-Ling , TAN Wei-Shi , ZHAI Zhang-Yin , WU Zong-Hua , JIA Quan-Jie , ZHENG Hong-Xiang , JIANG Shu-Shen . Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer. Chinese Physics C, 2005, 29(S1): 24-27.
[7]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[8]	WU Xiao-Shan , TAN Wei-Shi , JIANG Shu-Sheng , WU Zhong-Hua , DING Yong-Fan , . Microstructures of Ge/Si Superlattices Growtn at Low Temperature. Chinese Physics C, 2003, 27(8): 739-743.
[9]	ZHONG Xian-Hui , TAN Yu-Hong , NING Ping-Zhi . Shell Anomalies of Mg, Si and S Isotopes. Chinese Physics C, 2003, 27(9): 794-797.
[10]	HE Qing , JIA Quan-Jie , JIANG Xiao-Ming , CUI Jian , JIANG Zui-Min . Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction. Chinese Physics C, 2003, 27(S1): 49-52.
[11]	TIAN Hui-Xian , JIN Yun-Fan , ZHU Zhi-Yong , LIU Chang-Long , SUN You-Mei , WANG Zhi-Guang , LIU Jie , CHEN Xiao-Xi , WANG Yan-Bin , HOU Ming-Dong . Irradiation Effects in Polycarbonate Induced by 2.1GeV Kr Ions. Chinese Physics C, 2002, 26(4): 435-440.
[12]	LI Xi-Guo , Marcello Baldo , SONG Jian-Jun , LIU Fang . Diffusion Equations in Lie Group Manifold. Chinese Physics C, 2001, 25(1): 86-88.
[13]	LIU Chang-Long . Effects of Ion Irradiation on the Diffusion of Pre-implanted B Atoms in Crystalline Silicon. Chinese Physics C, 2001, 25(12): 1238-1244.
[14]	JIN YunFan , YANG Ru , LIU ChangLong , YAO JiangHong . Irradiation Effect in C₆₀ Films Induced By Low Energy Ions. Chinese Physics C, 2000, 24(1): 82-86.
[15]	WANG SuFang , Cavallaro Sl , JIN GenMing , Grzeszczuk A , Zipper W . Binary Reaction and Fusion Reaction in ²⁸Si+¹²C. Chinese Physics C, 2000, 24(10): 933-939.
[16]	Zhu Zhiyong , Hou Mingdong , Jin Yunfan , Li Changlin , Liu Changlong , Zhang Chonghong , Sun Youmei . Study of Defects in Silicon Irradiated With High Energy Ar Ions. Chinese Physics C, 1999, 23(12): 1248-1252.
[17]	Liu Changlong , Hou Mingdong , Cheng Song , Zhu Zhiyong , Wang Zhiguang , Sun Youmei , Jin Yunfan , Li Changlin . EPR Studies on Defect Production and lts Annealing Behavior in Silicon After High Fluence Ar lon lrradiation. Chinese Physics C, 1998, 22(7): 651-657.
[18]	Liu Changlong , Hou Mingdong , Zhu Zhiyong , Cheng Song , Li Baoquan , Sun Youmei , Wang Zhiguang , Jin Yunfan , Li Changlin , Wang Yinshu , Meng Qinghua . Paramagnetic Defect Production in Silicon After112MeV Ar Ion Irradiation. Chinese Physics C, 1998, 22(9): 858-863.
[19]	ZHENG Ji-Wen , ZHENG Zi-Ping , LIU Guo-Xing , CHEN Ke-Liang , WANG Su-Fang , BAI Xing-Ping , YU Xian , ZHANG Huan-Qiao , XU Jin-Cheng , LIU Zu-Hua , RUAN Ming , LV Jun , XU Kan . Measurement of the Complets Fusion Excitation Function for the ¹⁶O+²⁸Si Reaction. Chinese Physics C, 1992, 16(7): 640-646.
[20]	ZHAO EN-GUANG , LIU BO , LI QING-RUN . THE ISOBAR CONFIGURATION IN NUCLEI AND ITS INFLUENCE ON THE REACTION （p,π⁺）. Chinese Physics C, 1979, 3(6): 708-715.

Access

Get Citation

LIU Chang-Long, LU Yi-Ying and YIN LI. Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon[J]. Chinese Physics C, 2005, 29(11): 1107-1111.

LIU Chang-Long, LU Yi-Ying and YIN LI. Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon[J]. Chinese Physics C, 2005, 29(11): 1107-1111. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2004-12-27
Revised: 1900-01-01

Article Metric

Article Views(3471)
PDF Downloads(602)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon

Corresponding author: LIU Chang-Long,

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 Tianjin Key Laboratory of Low Dimension Materials Physics and Preparing Technology,Institute of Advanced Materials Physics Faculty of Sciences,Tianjin 300072,China

Received Date: 2004-12-27

Accepted Date: 1900-01-01

Available Online: 2005-11-05

Abstract: The effects of additional vacancy-like defects on thermal diffusion of B atoms in silicon were investigated by using secondary ion mass spectroscopy. B atoms were introduced into silicon by 30keV B ion implantation at a dose of 2×10¹⁴cm^－2, while the additional vacancy-like defects were produced by two different ways. One was via 40 or 160keV He ion implantation at a dose of 5×10¹⁶cm－2 and followed by an annealing at 800°C for 1h, which produced a well-defined cavity band near the projected range of He ions. The other was via 0.5MeV F or O ion implantation at a dose of 5×10¹⁵cm^－2,which creates excess vacancy-like defects around the 1/2 projected range of F or O ions. Our results clearly show that the additional vacancy-like defects could suppress the boron diffusion during subsequent thermal annealing at 800°C for 30 min. The suppressing effects were found to depend on both the ion type and ion energy. The results were qualitatively discussed in combination with the results obtained by using transmission electron microscopy and Rutherford backscattering spectroscopy.

HTML

Reference (1)

Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article