Radiation induced inter-device leakage degradation

HU Zhi-Yuan; LIU Zhang-Li; SHAO Hua; ZHANG Zheng-Xuan; NING Bing-Xu; CHEN Ming; BI Da-Wei; ZOU Shi-Chang

doi:10.1088/1674-1137/35/8/013

Chinese Physics C> 2011, Vol. 35> Issue(8) : 769-773 DOI: 10.1088/1674-1137/35/8/013

Radiation induced inter-device leakage degradation

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Abstract：
The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.

References

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HU Zhi-Yuan, LIU Zhang-Li, SHAO Hua, ZHANG Zheng-Xuan, NING Bing-Xu, CHEN Ming, BI Da-Wei and ZOU Shi-Chang. Radiation induced inter-device leakage degradation[J]. Chinese Physics C, 2011, 35(8): 769-773. doi: 10.1088/1674-1137/35/8/013

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Received: 2010-11-17
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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Radiation induced inter-device leakage degradation

Received Date: 2010-11-17

Accepted Date: 1900-01-01

Available Online: 2011-08-05

Abstract: The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.

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