Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate

DENG Ju-Zhi; CHEN Rong; SEKIGUCHI Tetsuhiro; BABA Yuji; HIRAO Norie; HONDA Mitsunori

doi:10.1088/1674-1137/32/9/018

Chinese Physics C> 2008, Vol. 32> Issue(9) : 769-772 DOI: 10.1088/1674-1137/32/9/018

Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate

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Abstract：
Thin silicon phthalocyanine dichloride films on HOPG were prepared and the
sample was heated in the vacuum with laser. The thickness of the thin sample
on HOPG was checked by X-ray photoemission spectroscopy. The orientation of
the molecules in respect to the substrate plane was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure (NEXAFS). In the NEXAFS spectra of the thin sample, two clear peaks which were assigned to 1s→σ_Si-N* and 1s→σ_Si-Cl^* appeared around 1847.2 eV and 1843.1 eV respectively. The intensities of the resonance peaks showed strong polarization dependence. A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-Cl bond was out of the molecular plane.

References

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DENG Ju-Zhi, CHEN Rong, SEKIGUCHI Tetsuhiro, BABA Yuji, HIRAO Norie and HONDA Mitsunori. Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate[J]. Chinese Physics C, 2008, 32(9): 769-772. doi: 10.1088/1674-1137/32/9/018

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Received: 2007-10-15
Revised: 2008-01-03

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沈阳化工大学材料科学与工程学院沈阳 110142

Synchrotron radiation studies of the orientation of thin silicon phthalocyanine dichloride film on HOPG substrate

Corresponding author: DENG Ju-Zhi,

Received Date: 2007-10-15
Accepted Date: 2008-01-03
Available Online: 2008-09-05

Abstract:

Thin silicon phthalocyanine dichloride films on HOPG were prepared and the
sample was heated in the vacuum with laser. The thickness of the thin sample
on HOPG was checked by X-ray photoemission spectroscopy. The orientation of
the molecules in respect to the substrate plane was investigated by measuring the silicon K-edge near edge X-ray absorption fine structure (NEXAFS). In the NEXAFS spectra of the thin sample, two clear peaks which were assigned to 1s→σ_Si-N* and 1s→σ_Si-Cl^* appeared around 1847.2 eV and 1843.1 eV respectively. The intensities of the resonance peaks showed strong polarization dependence. A quantitative analysis of the polarization dependence revealed that the Si-N bond tended to lie down while the Si-Cl bond was out of the molecular plane.