• [1]

    Zacharias M, Christen J, Basing J et al. J. Non-Cryst. Soli., 1996, 115: 1982 WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods B, 2002, 193: 6853 YU Y H, WONG S P, Wilson I H. Phys. Stat. Sol. A, 1998, 168: 5314 Pérez-Rodríguez A, Gozález-Varona O, Garrido B et al. J. Appl. Phys., 2003, 94: 2545 Garrido B, López M, FerréS et al. Nucl. Instrum. Methods B, 1996, 120: 1016 ZHAO J, MAO D S, LIN Z X et al. Appl. Phys. Lett., 1998, 73: 18387 WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods B, 2003, 209: 2008 WANG Z G, ZHAO Z M, Benyagoub A et al. Nucl. Instrum. Methods B, 2007, 256: 2889 Neri F, Trusso S, Vasi C et al. Thin Solid Films, 1998, 332: 29010 Moura C, Cunha L, Hórfo et al. Surf. Coat. Tech., 2003, 174-175: 32411 Dimitrov D B, Papadimitriou D, Beshkov G. Diam. Relat. Mater., 1999, 8: 114812 HU Z H, LIAO X B, DIAO H W et al. J. Cryst. Growth, 2004, 264: 713 Veresa M, Koósa T M, Tóth S et al. Diam. Relat. Mater., 2005, 14: 105114 Beeman D, Silverman J, Lynds R et al. Phys. Rev. B, 1984, 30: 87015 Dillon R O, Woollam J A. Phys. Rev. B, 1984, 29(6): 348216 Ferrari A C, Rodil S E, Robertson J. Phys. Rev. B, 2003, 67: 15530617 Ferrari A C, Robertson J. Phys. Rev. B, 2000, 61: 1409518 LIU C B, WANG Z G , ZANG H et al. Chinese Physics C (HEP NP), 2008, 32(S2): 251